ZuverSichT

Motivation

The ZuverSichT project addresses the growing importance of gallium nitride (GaN) technologies for power electronics, especially in Saxony. GaN semiconductors offer significant advantages over silicon, for example in automotive, industrial, and renewable energy applications. The global market for GaN power semiconductors is growing rapidly and represents a key technology for sustainable and efficient electronics. In order to secure and expand the competitiveness of Saxon companies such as X-FAB Dresden, ZuverSichT focuses on increasing the reliability and design support of these innovative semiconductors. In this context, central challenges in the metallization of components (Middle of Line, Back-End of Line) are examined and addressed using state-of-the-art methods such as nondestructive X-ray microscopy at up to 24 keV photon energy.

Objectives and Approach

ZuverSichT aims to increase the technology readiness level of Saxon GaN processes from TRL 4 to TRL 7. The focus is on the development of novel test structures with integrated poly-silicon heaters for accelerated analysis of degradation mechanisms such as electromigration (EM) and time-dependent dielectric breakdown (TDDB). The Fraunhofer Institutes IKTS, IIS/EAS, and especially Fraunhofer IWS work closely together: Fraunhofer IWS manufactures highly precise multilayer Laue lenses (MLL) for innovative X-ray microscopy at 24 keV, enabling non-destructive 3D analysis of complete components. In parallel, design-for-reliability methods are integrated into the Process Design Kit (PDK) to support IC designers in robust GaN circuits. The results feed into the production and validation of a demonstrator circuit, ensuring industrial applicability.

Innovation and Perspectives

The ZuverSichT project sets new standards in the reliability analysis of GaN power electronics by combining innovative in-situ test structures with the world's only MLL-based X-ray microscopy at 24 keV, which is being developed at Fraunhofer IWS. This technology enables detailed insights into degradation processes without sample destruction, allowing more precise process control and improved lifetime models. The close collaboration between Saxon research institutions and companies promotes technology transfer and creates sustainable competitive advantages for the semiconductor location. Looking ahead, ZuverSichT will play a key role in the development of energy-efficient and durable GaN components for future markets such as e-mobility, renewable energies, and the Internet of Things (IoT).