UHV ion beam sputtering system

Technical data

• vacuum:
  - process chamber: p < 2·10^-8 mbar
  - load lock: p < 5·10^-7 mbar
  
• substrate:
  - round up to Ø = 200 mm
  - square to L = 500 mm (without spin)
  
• targets: 6 pieces, size: 400 x 200 mm²
  
• ion beam sources:
  - primary source for target sputtering
  - secondary source for assisting and etching operation
  - activation: ECR (electrode cyclotron resonance)
  - size: 400 x 100 mm²
  - ion energies: E = 50 - 2000 eV
  
• optics:
  - for beam shaping and film thickness homogenization processes
  - 4 pieces, automatically exchangeable
  

Application

• synthesis of nanometer single- and multilayers for X-ray and EUV- optical systems
  
• synthesis of dielectrical multilayers for laser optical systems
  

Characteristics

• extremely low micro roughnesses in the range of  σ_rms = 0.15 ... 0.3 nm
• uniformity: 99.0 - 99.9 % over Ø 200 mm
• absorption-free dielectrical coatings within the UV-IR spectral range