Chemical vapor deposition at atmospheric pressure AP-CVD

Chemical vapor deposition at atmospheric pressure (AP-CVD)

Darstellung AP-CVD-Prozess
© Fraunhofer IWS Dresden

Darstellung AP-CVD-Prozess

Titandioxid-Dünnschicht auf Edelstahl in CVD-Beschichtungsanlage
© Fraunhofer IWS Dresden

Titandioxid-Dünnschicht auf Edelstahl in CVD-Beschichtungsanlage

AP-CVD can deposit functional thin films at low process temperatures onto nearly all materials. Low-cost liquid or gaseous precursors are transferred to the surfaces via the vapor phase. The vapor can be activated by plasma or reactions in the vapor phase (water, ozone). Typical coating thicknesses range from 10 to 1000 nm. IWS AP-CVD coating systems can be adapted to efficient in-line processes. We offer sample coatings of up to 300 by 300 mm2 for feasibility studies.