UHV ion beam sputtering system

Fraunhofer IWS

UHV ion beam sputtering system for nanometer precise coatings and etching procedures

Technical data

  • vacuum:
    - process chamber: p < 2·10-8 mbar
    - load lock: p < 5·10-7 mbar
  • substrate:
    - round up to Ø = 200 mm
    - square to L = 500 mm (without spin)
  • targets: 6 pieces, size: 400 x 200 mm2
  • ion beam sources:
    - primary source for target sputtering
    - secondary source for assisting and etching operation
    - activation: ECR (electrode cyclotron resonance)
    - size: 400 x 100 mm2
    - ion energies: E = 50 - 2000 eV
  • optics:
    - for beam shaping and film thickness homogenization processes
    - 4 pieces, automatically exchangeable

Application

  • synthesis of nanometer single- and multilayers for X-ray and EUV- optical systems
  • synthesis of dielectrical multilayers for laser optical systems

Characteristics

  • extremely low micro roughnesses in the range of  σrms = 0.15 ... 0.3 nm
  • uniformity: 99.0 - 99.9 % over Ø 200 mm
  • absorption-free dielectrical coatings within the UV-IR spectral range

 

Social Bookmarks